Optimizing rf Power for Preferential C≡N Bond Formation in a-CNx Thin Films Prepared by rf-PECVD Technique
نویسندگان
چکیده
منابع مشابه
Deposition and characterization of silicon carbon nitride films prepared by RF-PECVD with capacitive coupling
The goals of this work were to synthesize stoichiometric silicon carbon nitride (Si1.5C1.5N4) films using the RF-PECVD method and to characterize the deposited material. Gas mixtures, as opposed to an organic monomer, were chosen for reactants. Gas mixtures allow for varying the concentration of the elements needed for silicon carbon nitride synthesis and thereby optimizing the composition of t...
متن کاملThin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF-PECVD
We report on heterojunction solar cells whose thin intrinsic crystalline absorber layer has been obtained by plasma enhanced chemical vapor deposition at 165°C on highly doped p-type (100) crystalline silicon substrates. We have studied the effect of the epitaxial intrinsic layer thickness in the range from 1 to 2.4 μm. This absorber is responsible for photo-generated current whereas highly dop...
متن کاملErbium-Doped Amorphous Carbon-Based Thin Films: A Photonic Material Prepared by Low-Temperature RF-PEMOCVD
The integration of photonic materials into CMOS processing involves the use of new materials. A simple one-step metal-organic radio frequency plasma enhanced chemical vapor deposition system (RF-PEMOCVD) was deployed to grow erbium-doped amorphous carbon thin films (a-C:(Er)) on Si substrates at low temperatures (<200 °C). A partially fluorinated metal-organic compound, tris(6,6,7,7,8,8,8-hepta...
متن کاملThermoelectric and Transport Properties of Delafossite CuCrO2:Mg Thin Films Prepared by RF Magnetron Sputtering
P-type Mg doped CuCrO₂ thin films have been deposited on fused silica substrates by Radio-Frequency (RF) magnetron sputtering. The as-deposited CuCrO₂:Mg thin films have been annealed at different temperatures (from 450 to 650 °C) under primary vacuum to obtain the delafossite phase. The annealed samples exhibit 3R delafossite structure. Electrical conductivity σ and Seebeck coefficient S of al...
متن کاملXRD Characterization of AlN Thin Films Prepared by Reactive RF-Sputter Deposition
AlN thin films have been grown on R((1-12) surface-cut)-Al2O3, SiO2-glass and C((001) surface-cut)-Al2O3 substrates, by using a reactive-RF-sputter-deposition method. X-ray diffraction (XRD) shows that AlN film has (110) orientation of wurtzite crystal structure for R-Al2O3 and (001) orientation for SiO2-glass and C-Al2O3 substrates. The film thickness was analyzed by Rutherford backscattering ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2013
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/431/1/012009